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05D15 AM1430N KDS8333C B7671 4C20BD CD2003F V07E140P ZMM5261B
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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION With TO-220C package Complement to type BD895A/897A/901A DARLINGTON APPLICATIONS For use in output stages in audio equipment, general amplifier,and analogue switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
BD896A/898A/900A
Absolute maximum ratings(Ta=25ae )
SYMBOL

PARAMETER
BD896A BD898A
VCBO
Collector-base voltage
VCEO
INCH
ANG
BD900A
SEM E
Open base
Open emitter
OND IC
CONDITIONS
TOR UC
VALUE -45 -60 -80 -45 -60 -80
UNIT
V
BD896A BD898A
Collector-emitter voltage
V
BD900A VEBO IC IB Emitter-base voltage Collector current-DC Base current TC=25ae PT Total power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature Open collector
-5 -8 -300 70
V A mA
W 2 150 -65~150 ae ae
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER BD896A V(BR)CEO Collector-emitter breakdown voltage BD898A BD900A VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD896A ICBO Collector cut-off current BD898A BD900A IC=-4A ,IB=-16mA IC=-4A ; VCE=-3V VCB=-45V, IE=0 TC=100ae VCB=-60V, IE=0 TC=100ae VCB=-80V, IE=0 TC=100ae VCE=-30V, IB=0 VCE=-30V, IB=0 VCE=-40V, IB=0 VEB=-5V; IC=0 IC=-100mA, IB=0 CONDITIONS
BD896A/898A/900A
SYMBOL
MIN -45 -60 -80
TYP.
MAX
UNIT
V
-2.8 -2.5 -0.2 -2.0 -0.2 -2.0 -0.2 -2.0
V V
mA
ICEO
Collector cut-off current

BD896A BD898A BD900A
IEBO hFE VEC ton toff
Emitter cut-off current DC current gain
Diode forward voltage Turn-on time Turn-off time
HAN INC
SEM GE
IE=-8A
OND IC
s
TOR UC
-0.5 -2 -3.5 1 5 |I |I
mA
mA
IC=-4A ; VCE=-3V
750 V s s
IC=3A ; IB1=-IB2=12mA VBE=-3.5V;RL=10| ;tp=20|I
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.79 UNIT ae /W
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
BD896A/898A/900A
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 Outline dimensions
3


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